J. Bachmann

activity

20212026

most citedPost-deposition annealing and interfacial ALD buffer layers of Sb

_{2}

_{3}

/CdS stacks for reduced interface recombination and increased open-circuit voltages

18 citations · 18 across the 2 of their papers we have counts for

collaborators

Showing cond-mat.mtrl-sciShow all

2 papers · 1 filter

cond-mat.mtrl-sci2026

Ionomer-free Iridium Anodes with Low Loading for Zero-gap Electrolyzers via Direct Atomic Layer Deposition

Peter M. Piechulla, Iris Blommestein, Anne van Gerven +6

Proton exchange membrane water electrolysis (PEMWE) is among the most promising techniques to provide hydrogen as both energy carrier and feedstock for the chemical industry, due t…

cond-mat.mtrl-sci2022★ 18 cited

Post-deposition annealing and interfacial ALD buffer layers of Sb $_{2}$ Se $_{3}$ /CdS stacks for reduced interface recombination and increased open-circuit voltages

Thomas Paul Weiss, Ignacio Minguez-Bacho, Elena Zuccalà +8

Currently, Sb $_{2}$ Se $_{3}$ thin films receive considerable research interest as a solar cell absorber material. When completed into a device stack, the major bottleneck for further de…

Ionomer-free Iridium Anodes with Low Loading for Zero-gap Electrolyzers via Direct Atomic Layer Deposition

Post-deposition annealing and interfacial ALD buffer layers of Sb2​Se3​/CdS stacks for reduced interface recombination and increased open-circuit voltages

Post-deposition annealing and interfacial ALD buffer layers of Sb $_{2}$ Se $_{3}$ /CdS stacks for reduced interface recombination and increased open-circuit voltages