47 citations · 83 across the 4 of their papers we have counts for
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cond-mat.mtrl-sci2021★ 8 cited
Atomic-scale 3D imaging of individual dopant atoms in a complex oxide
K. A. Hunnestad, C. Hatzoglou, Z. M. Khalid +6
A small percentage of dopant atoms can completely change the physical properties of the host material. For example, chemical doping controls the electronic transport behavior of se…
cond-mat.mtrl-sci2017★ 47 cited
Electronic bulk and domain wall properties in B-site doped hexagonal ErMnO
T. S. Holstad, D. M. Evans, A. Ruff +8
Acceptor and donor doping is a standard for tailoring semiconductors. More recently, doping was adapted to optimize the behavior at ferroelectric domain walls. In contrast to more…