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researcher

S. Alajlouni

1 paper hereh-index 8176 citations17 works total

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author position
  • middle author1

Across the 1 of 1 paper where every author was matched, so the position is known.

fields
  • physics.app-ph1

identity via Semantic Scholar / OpenAlex

most citedA Gate-All-Around Single-Channel In2O3 Nanoribbon FET with Near 20 mA/μm Drain Current

41 citations · 41 across the 1 of their papers we have counts for

collaborators

1 paper

physics.app-ph2022★ 41 cited

A Gate-All-Around Single-Channel In2O3 Nanoribbon FET with Near 20 mA/μm Drain Current

Zhuocheng Zhang, Zehao Lin, Pai-Ying Liao +12

In this work, we demonstrate atomic-layer-deposited (ALD) single-channel indium oxide (In2O3) gate-all-around (GAA) nanoribbon FETs in a back-end-of-line (BEOL) compatible process.…

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Not affiliated with arXiv. Researcher data from Semantic Scholar (ODC-BY) and OpenAlex.