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researcher

Z. Shang

2 papers hereh-index 241.7k citations70 works total

Matching runs newest-first, so older work may not be attached to this profile yet.

author position
  • middle author2

Across the 2 of 2 papers where every author was matched, so the position is known.

fields
  • cond-mat.mes-hall1
  • physics.app-ph1
same name
  • Z. Shang — 124 papers, h 2
  • Z. Shang — 70 papers, h 4
  • Z. Shang — 52 papers, h 28
  • Z. Shang — 38 papers, h 4
  • Z. Shang — 9 papers, h 1
  • Z. Shang — 5 papers, h 5

Either other researchers who publish under this name, or the same person where the external sources have not merged their records.

identity via Semantic Scholar / OpenAlex

most citedA Gate-All-Around Single-Channel In2O3 Nanoribbon FET with Near 20 mA/μm Drain Current

41 citations · 75 across the 2 of their papers we have counts for

collaborators
Showing cond-mat.mes-hallShow all

1 paper · 1 filter

cond-mat.mes-hall2022★ 34 cited

A Nanometer-Thick Oxide Semiconductor Transistor with Ultra-High Drain Current

Zehao Lin, Mengwei Si, Vahid Askarpour +12

High drive current is a critical performance parameter in semiconductor devices for high-speed, low-power logic applications or high-efficiency, high-power, high-speed radio freque…

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Not affiliated with arXiv. Researcher data from Semantic Scholar (ODC-BY) and OpenAlex.