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20102021
most citedBoron nitride substrates for high-quality graphene electronics

7.1k citations · 11.6k across the 23 of their papers we have counts for

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cond-mat.mes-hall2011

High-frequency performance of graphene field effect transistors with saturating IV-characteristics

I. Meric, C. R. Dean, S. -J. Han +4

High-frequency performance of graphene field-effect transistors (GFETs) with boron-nitride gate dielectrics is investigated. Devices show saturating IV characteristics and fmax val…