most citedEffect of gallium termination on InGaAs wetting layer properties in droplet epitaxy InGaAs quantum dots

2 citations · 2 across the 1 of their papers we have counts for

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cond-mat.mes-hall2022★ 2 cited

Effect of gallium termination on InGaAs wetting layer properties in droplet epitaxy InGaAs quantum dots

David Fricker, Paola Atkinson, Mihail I Lepsa +5

Self-assembled quantum dots based on III-V semiconductors have excellent properties for applications in quantum optics. However, the presence of a 2D wetting layer which forms duri…