11 citations · 11 across the 2 of their papers we have counts for
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cond-mat.mes-hall2010
Proposal and design of a new SiC-emitter lateral NPM Schottky collector bipolar transistor on SOI for VLSI applications
M. Jagadesh Kumar, D. V. Rao
A novel bipolar transistor structure, namely, a SiC emitter lateral NPM Schottky collector bipolar transistor (SCBT) with a silicon-on-insulator (SOI) substrate is explored using t…
cond-mat.mes-hall2010★ 11 cited
Estimation and Compensation of Process Induced Variations in Nanoscale Tunnel Field Effect Transistors (TFETs) for Improved Reliability
Sneh Saurabh, M. Jagadesh Kumar
Tunnel Field Effect Transistors (TFET) have extremely low leakage current, exhibit excellent subthreshold swing and are less susceptible to short channel effects. However, TFETs do…