activity
20102014
most citedDoping-less Tunnel Field Effect Transistor: Design and Investigation

648 citations · 1.4k across the 18 of their papers we have counts for

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Showing cond-mat.mes-hallShow all

16 papers · 1 filter

cond-mat.mes-hall2014★ 73 cited

A Pseudo 2D-analytical Model of Dual Material Gate All-Around Nanowire Tunneling FET

Rajat Vishnoi, M. Jagadesh Kumar

In this paper, we have worked out a pseudo two dimensional (2D) analytical model for surface potential and drain current of a long channel p-type Dual Material Gate (DMG) Gate All-…

cond-mat.mes-hall2014★ 31 cited

Impact of gate leakage considerations in tunnel field effect transistor design

Poornendu Chaturvedi, M. Jagadesh Kumar

In this paper, we have presented the impact of the gate leakage through thin gate dielectrics (SiO2 and high-\k{appa} gate dielectric) on the subthreshold characteristics of the tu…

cond-mat.mes-hall2014★ 109 cited

Compact Analytical Model of Dual Material Gate Tunneling Field Effect Transistor using Interband Tunneling and Channel Transport

Rajat Vishnoi, M. Jagadesh Kumar

In this paper we have developed a two dimensional (2D) analytical model for surface potential and drain current for a long channel Dual Material Gate (DMG) Silicon-on-Insulator (SO…

cond-mat.mes-hall2014★ 157 cited

Dielectric-Modulated Impact-Ionization MOS (DIMOS) Transistor as a Label-free Biosensor

N. Kannan, M. Jagadesh Kumar

In this letter, we propose a dielectric-modulated Impact-Ionization MOS (DIMOS) transistor based sensor for application in label-free detection of biomolecules. Numerous reports ex…

cond-mat.mes-hall2013★ 648 cited

Doping-less Tunnel Field Effect Transistor: Design and Investigation

M. Jagadesh Kumar, Sindhu Janardhanan

Using calibrated simulations, we report a detailed study of the doping-less tunnel field effect transistor (TFET) on a thin intrinsic silicon film using charge plasma concept. With…

cond-mat.mes-hall2013★ 55 cited

Schottky Collector Bipolar Transistor without Impurity Doped Emitter and Base: Design and Performance

Kanika Nadda, M. Jagadesh Kumar

In this paper, we report an alternative approach of implementing a Schottky collector bipolar transistor without doping the ultrathin SOI film. Using different metal work function…