2 papers
cond-mat.mes-hall2010
Weak antilocalization effect of high-mobility two-dimensional electron gas in inversion layer on p-type HgCdTe
Rui Yang, Guolin Yu, Kuanghong Gao +6
Magnetoconductance of a gated two-dimensional electron gas (2DEG) in the inversion layer on p-type HgCdTe crystal is investigated. At strong magnetic fields, characteristic feature…
cond-mat.dis-nn2010
Gate-controlled weak antilocalization effect in inversion layer on p-type HgCdTe
Rui Yang, Guolin Yu, Xinzhi Liu +7
We discover weak antilocalization effect of two-dimensional electron gas with one electric subband occupied in the inversion layer on p-type HgCdTe crystal. By fitting the model of…