67 citations · 81 across the 4 of their papers we have counts for
Showing 2011Show all
2 papers · 1 filter
cond-mat.mtrl-sci2011★ 3 cited
Erbium Silicide Growth in the Presence of Residual Oxygen
Nicolas Reckinger, Xiaohui Tang, Sylvie Godey +6
The chemical changes of Ti/Er/n-Si(100) stacks evaporated in high vacuum and grown ex situ by rapid thermal annealing were scrutinized. The emphasis was laid on the evolution with…
cond-mat.mtrl-sci2011★ 11 cited
Very low effective Schottky barrier height for erbium disilicide contacts on n-Si through arsenic segregation
Nicolas Reckinger, Claude Poleunis, Emmanuel Dubois +4
The segregation of As+ ions implanted into thin Er films deposited on n-Si substrates is studied after ErSi2-x formation. The same lowering of the effective Schottky barrier height…