932 citations · 976 across the 6 of their papers we have counts for
6 papers
Quasi-HfO/ AlO and AlO/ HfO Based Memristor Devices: Role of Bi-layered Oxides in Digital Set and Analog Reset Switching
Pradip Basnet, Erik Anderson, Bhaswar Chakrabarti +3
Understanding the resistive switching behavior, or the resistance change, of oxide-based memristor devices, is critical to predicting their responses with known electrical inputs.…
Substrate Dependent Resistive Switching in Amorphous-HfOx Memristors: An Experimental and Computational Investigation
Pradip Basnet, Darshan G Pahinkar, Matthew P. West +3
While two-terminal HfOX (x<2) memristor devices have been studied for ion transport and current evolution, there have been limited reports on the effect of the long-range thermal e…
Quantum-statistical transport phenomena in memristive computing architectures
Christopher N. Singh, Brian A. Crafton, Mathew P. West +8
The advent of reliable, nanoscale memristive components is promising for next generation compute-in-memory paradigms, however, the intrinsic variability in these devices has preven…
Nonlinear Raman Shift Induced by Exciton-to-Trion Transformation in Suspended Trilayer MoS2
Hossein Taghinejad, Mohammad Taghinejad, Alexey Tarasov +6
Layered two-dimensional (2D) semiconductors such as molybdenum disulfide (MoS2) have recently attracted remarkable attention because of their unique physical properties. Here, we u…
Graphene films with large domain size by a two-step chemical vapor deposition process
Xuesong Li, Carl W. Magnuson, Archana Venugopal +12
The fundamental properties of graphene are making it an attractive material for a wide variety of applications. Various techniques have been developed to produce graphene and recen…
Large domain graphene
Xuesong Li, Carl W. Magnuson, Archana Venugopal +3
Graphene growth by chemical vapor deposition has received a lot of attention recently owing to the ease with which large area films can be grown, but growth of large domain or equi…