49 citations · 96 across the 4 of their papers we have counts for
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High purity semi-insulating 4H-SiC epitaxial layers by Defect-Competition Epitaxy
MVS Chandrashekhar, Iftekhar Chowdhury, P. Kaminski +3
Thick, high-purity semi-insulating (SI)homoepitaxial layers on Si-face 4H-SiC weregrownsystematically, with resistivity \geq 109Ω-cmby maintaining high C/Si ratios 1.3-15 during gr…
High growth rate 4H-SiC epitaxial growth using dichlorosilane in a hot-wall CVD reactor
Iftekhar Chowdhury, MVS Chandrasekhar, Paul B Klein +2
Thick, high quality 4H-SiC epilayers have been grown in a vertical hot-wall chemical vapor deposition system at a high growth rate on (0001) 80 off-axis substrates. We discuss the…
Doping Dependence of Thermal Oxidation on n-type 4H-SiC
B. K. Daas, M. M. Islam, I. A. Chowdhury +3
The doping dependence of dry thermal oxidation rates in n-type 4H-SiC was investigated. The oxidation was performed in the temperature range 1000C to 1200C for samples with nitroge…