Multiferroic Ti${}_3$C${}_2$T${}_x$ MXene with Tunable Ferroelectric-controlled High Performance Resistive Memory Devices

Rabia Tahir, Sabeen Fatima, Syedah Afsheen Zahra +2

Multiferroic (MF) devices based on simultaneous ferroelectric and ferromagnetic phenomena are considered to be promising candidates for future bi-functional micro/nano-electronics.…