D. Catherall

most citedHigh-field charge transport and noise in p-Si from first principles

7 citations · 7 across the 2 of their papers we have counts for

collaborators

2 papers

cond-mat.mes-hall2022

Isotropic plasma-thermal atomic layer etching of aluminum nitride using SF $_{6}$ plasma and Al(CH $_{3}$ ) $_{3}$

Haozhe Wang, Azmain Hossain, David Catherall +1

We report the isotropic plasma atomic layer etching (ALE) of aluminum nitride using sequential exposures of SF $_{6}$ plasma and trimethylaluminum (Al(CH $_{3}$ ) $_{3}$ , TMA). ALE was obser…

cond-mat.mtrl-sci2022★ 7 cited

High-field charge transport and noise in p-Si from first principles

David Catherall, Austin Minnich

The parameter-free computation of charge transport properties of semiconductors is now routine owing to advances in the ab-initio description of the electron-phonon interaction. Ma…

Isotropic plasma-thermal atomic layer etching of aluminum nitride using SF6​ plasma and Al(CH3​)3​

High-field charge transport and noise in p-Si from first principles

Isotropic plasma-thermal atomic layer etching of aluminum nitride using SF $_{6}$ plasma and Al(CH $_{3}$ ) $_{3}$