activity
20132022
most citedTemperature-dependent Phonon Shifts in Monolayer MoS2

234 citations · 301 across the 5 of their papers we have counts for

collaborators

5 papers

physics.app-ph2022★ 18 cited

Properties and device performance of BN thin films grown on GaN by pulsed laser deposition

Abhijit Biswas, Mingfei Xu, Kai Fu +18

Wide and ultrawide-bandgap semiconductors lie at the heart of next-generation high-power, high-frequency electronics. Here, we report the growth of ultrawide-bandgap boron nitride…

cond-mat.mtrl-sci2022★ 19 cited

Unidirectional domain growth of hexagonal boron nitride thin films

Abhijit Biswas, Qiyuan Ruan, Frank Lee +16

Two-dimensional van der Waals (2D-vdW) layered hexagonal boron nitride (h-BN) has gained tremendous research interest over recent years due to its unconventional domain growth morp…

physics.app-ph2022★ 20 cited

Unravelling the room temperature growth of two-dimensional h-BN nanosheets for multifunctional applications

Abhijit Biswas, Rishi Maiti, Frank Lee +21

Room temperature growth of two-dimensional van der Waals (2D-vdW) materials is indispensable for state-of-the-art nanotechnology. The low temperature growth supersedes the requirem…

cond-mat.mtrl-sci2021★ 10 cited

A Reactive Molecular Dynamics Study of Hydrogenation on Diamond Surfaces

Eliezer F. Oliveira, Mahesh R. Neupane, Chenxi Li +9

Hydrogenated diamond has been regarded as a promising material in electronic device applications, especially in field-effect transistors (FETs). However, the quality of diamond hyd…

cond-mat.mes-hall2013★ 234 cited

Temperature-dependent Phonon Shifts in Monolayer MoS2

Nicholas Lanzillo, A. Glen Birdwell, Matin Amani +9

We present a combined experimental and computational study of two-dimensional molybdenum disulfde (MoS2) and the effect of temperature on the frequency shifts of the Raman-active E…