5 citations · 9 across the 3 of their papers we have counts for
3 papers
Interface traps in graphene field effect devices: extraction methods and influence on characteristics
G. I. Zebrev, E. V. Melnik, A. A. Tselykovskiy
We study impact of the near-interfacial oxide traps on the C-V and I-V characteristics of graphene gated structures. Methods of extraction of interface trap level density in graphe…
Physics-Based Compact Modeling of Double-Gate Graphene Field-Effect Transistor Operation Including Description of Two Saturation Modes
Gennady I. Zebrev, Alexander A. Tselykovskiy, Valentin O. Turin
Based on diffusion-drift approximation a version of analytic compact model for large-area double-gate graphene field-effect transistor is presented. As parts of the model, the elec…
Influence of Interface Traps and Electron-Hole Puddles on Quantum Capacitance and Conductivity in Graphene Field-Effect Transistors
G. I. Zebrev, E. V. Melnik, A. A. Tselykovskiy
We study theoretically an influence of the near-interfacial insulator traps and electron-hole puddles on the small-signal capacitance and conductance characteristics of the gated g…