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20082026
most citedBand-Gap Control via Structural and Chemical Tuning of Transition Metal Perovskite Chalcogenides

287 citations · 1.5k across the 56 of their papers we have counts for

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Showing 2025Show all

7 papers · 1 filter

cond-mat.mtrl-sci2025

Chemical state detection and charge transfer in complex oxide heterostructures via in situ Auger Electron Spectroscopy

Harish Kumarasubramanian, Jayakanth Ravichandran

Understanding and controlling the chemical states both in the bulk and at the interfaces of complex oxide thin films is essential for engineering a wide range of electronic, optica…

cond-mat.mtrl-sci2025

Evaluation of carbon incorporation in sulfide thin films grown by hybrid pulsed laser deposition

Claire Wu, Mythili Surendran, Shin Muramoto +2

Vapor-pressure-mismatched materials, such as transition metal chalcogenides, have emerged as key electronic, photonic, and quantum materials. Hybrid pulsed laser deposition (hPLD)…

cond-mat.mtrl-sci2025

Sub-nm2 ferroelectric domains via charged 180 degree walls in ZrO2

Nashrah Afroze, Hamoon Fahrvandi, Guodong Ren +31

Flat phonon bands in fluorite ferroelectrics (HfO2 or ZrO2) shrink polar domains laterally to an irreducible half-unit-cell width (0.27 nm) within which the vertical arrangement of…

cond-mat.mtrl-sci2025

Crystal Growth of Chalcogenides and Oxy-Chalcogenides Using Chloride Exchange Reaction

Shantanu Singh, Boyang Zhao, Christopher E. Stevens +5

Chalcogenides and oxy-chalcogenides, including complex chalcogenides and transition metal dichalcogenides, are emerging semiconductors with direct or indirect band gaps within the…

cond-mat.mtrl-sci2025

Towards Atomic-Scale Control over Structural Modulations in Quasi-1D Chalcogenides for Colossal Optical Anisotropy

Guodong Ren, Shantanu Singh, Gwan Yeong Jung +10

Optically anisotropic materials are sought after for tailoring the polarization of light. Recently, colossal optical anisotropy was reported in a quasi-one-dimensional chalcogenide…

cond-mat.mtrl-sci2025

Textured growth and electrical characterization of Zinc Sulfide on back-end-of-the-line (BEOL) compatible substrates

Claire Wu, Mythili Surendran, Anika Tabassum Priyoti +10

Scaling of transistors has enabled continuous improvements in logic device performance, especially through materials engineering. However, surpassing horizontal limitations in chip…