27 citations · 106 across the 10 of their papers we have counts for
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Edge excitation geometry for studying intrinsic emission spectra of bulk n-InP
Oleg Semyonov, Arsen Subashiev, Zhichao Chen +1
The shape of the photoluminescence line excited at an edge face of InP wafer and recorded from the broadside is used to investigate the intrinsic emission spectrum. The procedure i…
Temperature controlled Lévy flights of minority carriers in photoexcited bulk n-InP
Arsen V. Subashiev, Oleg Semyonov, Zhichao Chen +1
We study the spatial distribution of minority carriers arising from their anomalous photon-assisted diffusion upon photo-excitation at an edge of n-InP slab for temperatures rangin…
Photon assisted Levy flights of minority carriers in n-InP
Oleg Semyonov, Arsen V. Subashiev, Zhichao Chen +1
We study the photoluminescence spectra of n-doped InP bulk wafers, both in the reflection and the transmission geometries relative to the excitation beam. From the observed spectra…
Reduction of optical reflection from InP semiconductor wafers after high-temperature annealing
Oleg G. Semyonov, Arsen V. Subashiev, Alexander Shabalov +4
We observed and studied strong reduction of optical reflection from the surface of InP wafers after high-temperature annealing. The effect is observed over a wide range of the inci…
Urbach tail studies by luminescence filtering in moderately doped bulk InP
Arsen V. Subashiev, Oleg Semyonov, Zhinchao Chen +1
The shape of the photoluminescence line registered from a side edge of InP wafer is studied as function of the distance from the excitation spot. The observed red shift in the lumi…
Epitaxial InGaAsP/InP photodiode for registration of InP scintillation
Serge Luryi, Alex Kastalsky, Michael Gouzman +11
Operation of semiconductor scintillators requires optically-tight integration of the photoreceiver system on the surface of the scintillator slab. We have implemented an efficient…
Radiation efficiency of heavily doped bulk n-InP semiconductor
Oleg Semyonov, Arsen Subashiev, Zhichao Chen +1
Recombination of minority carriers in heavily doped n-InP wafers has been investigated using spectral and time-resolved photoluminescence at different temperatures. Studies of the…