H. Kim

most citedExperiments and Modeling of Defect Dynamics and BTI Behavior in Doped InO TFTs during

40 0^{\circ}

C Post-Processing Forming Gas Annealing

1 citations · 1 across the 1 of their papers we have counts for

collaborators

1 paper

cond-mat.mtrl-sci2026★ 1 cited

Experiments and Modeling of Defect Dynamics and BTI Behavior in Doped InO TFTs during $40 0^{\circ}$ C Post-Processing Forming Gas Annealing

Yu-Hsin Kuo, Chengyang Zhang, Priyankka Ravikumar +13

We investigate the impact of a monolithic three-dimensional (M3D) integration process-critical $40 0^{\circ}$ C post-processing forming gas anneal (FGA) on the electrical performance,…

Experiments and Modeling of Defect Dynamics and BTI Behavior in Doped InO TFTs during 400∘C Post-Processing Forming Gas Annealing

Experiments and Modeling of Defect Dynamics and BTI Behavior in Doped InO TFTs during $40 0^{\circ}$ C Post-Processing Forming Gas Annealing