2 papers
cond-mat.mes-hall2015
Simultaneous Localization of Electrons in different -valleys in Ge/Si Quantum Dot Structures
Aigul Zinovieva, Natalia Stepina, Anatoly Dvurechenskii +4
In the present work the possibility of simultaneous localization of two electrons in and valleys in ordered structures with Ge/Si(001) quantum dots (QD) was ver…
cond-mat.mes-hall2010
Strain determination in the Si channel above a single SiGe island inside a field effect transistor using nanobeam x-ray diffraction
N. Hrauda, J. J. Zhang, E. Wintersberger +9
SiGe islands are used to induce tensile strain in the Si channel of Field Effect Transistors to achieve larger transconductance and higher current driveabilities. We report on x-ra…