Influence of Ge nanocrystals and radiation defects on C-V characteristics in Si-MOS structures

Shai Levy, Issai Shlimak, Avraham Chelly +2

Metal-Oxide-Semiconductor (MOS) structures containing 74Ge nanocrystals (NC-Ge) imbedded inside the SiO_2 layer were studied for their capacitance characterization. Ge atoms were i…