956 citations · 3k across the 26 of their papers we have counts for
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cond-mat.mes-hall2010★ 168 cited
On the possibility of obtaining MOSFET-like performance and sub-60 mV/decade swing in 1D broken-gap tunnel transistors
Siyuranga O. Koswatta, Steven J. Koester, Wilfried Haensch
Tunneling field-effect transistors (TFETs) have gained a great deal of recent interest due to their potential to reduce power dissipation in integrated circuits. One major challeng…
cond-mat.mes-hall2010★ 19 cited
Scalability of Atomic-Thin-Body (ATB) Transistors Based on Graphene Nanoribbons
Qin Zhang, Yeqing Lu, Huili Grace Xing +2
A general solution for the electrostatic potential in an atomic-thin-body (ATB) field-effect transistor geometry is presented. The effective electrostatic scaling length, λeff, is…