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Spin Hall effect in prototype Rashba ferroelectrics GeTe and SnTe
H. Wang, P. Gopal, S. Picozzi +3
Ferroelectric Rashba semiconductors (FERSC) have recently emerged as a promising class of spintronics materials. The peculiar coupling between spin and polar degrees of freedom res…
Absorption and emission modulation in MoS2-GaN (0001) heterostructure by interface phonon-exciton coupling
Yuba Poudel, Jagoda Slawinska, Priya Gopal +6
Semiconductor heterostructures based on layered two-dimensional transition metal dichalcogenides (TMD) interfaced to gallium nitride (GaN) are excellent material systems to realize…
Persistent spin helix in Rashba-Dresselhaus ferroelectric CsBiNb2O7
Carmine Autieri, Paolo Barone, Jagoda Slawinska +1
Ferroelectric Rashba semiconductors (FERSC) are a novel class of multifunctional materials showing a giant Rashba spin splitting which can be reversed by switching the electric pol…