108 citations · 113 across the 2 of their papers we have counts for
5 papers
Tunable band gap in germanene by surface adsorption
Meng Ye, Ruge Quhe, Jiaxin Zheng +7
Opening a sizable band gap in the zero-gap germanene without heavy loss of carrier mobility is a key issue for its application in nanoelectronic devices such as high-performance fi…
Tunable band gap in few-layer graphene by surface adsorption
Ruge Quhe, Jianhua Ma, Zesheng Zeng +8
There is a tunable band gap in ABC-stacked few-layer graphene (FLG) via applying a vertical electric field, but the operation of FLG-based field effect transistor (FET) requires tw…
Half-Metallic Silicene and Germanene Nanoribbons: towards High-Performance Spintronics Device
Yangyang Wang, Jiaxin Zheng, Zeyuan Ni +7
By using first-principles calculations, we predict that an in-plane homogenous electrical field can induce half-metallicity in hydrogen-terminated zigzag silicene and germanene nan…
Interfacial Properties of Bilayer and Trilayer Graphene on Metal Substrates
Jiaxin Zheng, Yangyang Wang, Lu Wang +7
One popular approach to prepare graphene is to grow them on transition metal substrates via chemical vapor deposition. By using the density functional theory with dispersion correc…
Functionalized Graphene for High Performance Two-dimensional Spintronics Devices
Linze Li, Rui Qin, Hong Li +5
Using first-principles calculations, we explore the possibility of functionalized graphene as high performance two-dimensional spintronics device. Graphene functionalized with O on…