Realization of Very High Mobility InAs Quantum Wells on InP Substrates Through Convex InAlAs Graded Buffer Optimization

Tyler Lindemann, Rojila Ghimire, Alejandro Alcaraz Ramirez +4

Due to strong spin-orbit coupling, large Landé $g$-factor, and a highly transparent interface, the two-dimensional electron gas (2DEG) in InAs quantum wells provides an ideal platf…