Influence of chemical vapor deposition conditions on N incorporation ratio on vicinal 4H-SiC(000-1) surface: Ab Initio-based approach

Wataru Ota, Akira Kusaba, Yoshihiro Kangawa +3

In experimental studies, increasing the ratio of source gases (C3H8/SiH4; C/Si ratio) for chemical vapor deposition (CVD) causes the growth rate to increase monotonically, and nitr…