activity
20092011
most citedPersistence of superconductivity in niobium ultrathin films grown on R-Plane Sapphire

47 citations · 111 across the 6 of their papers we have counts for

collaborators

6 papers

cond-mat.mes-hall2011★ 47 cited

Persistence of superconductivity in niobium ultrathin films grown on R-Plane Sapphire

Cécile Delacour, Luc Ortega, Marc Faucher +4

We report on a combined structural and electronic analysis of niobium ultrathin films (from 2 to 10 nm) deposited in ultra-high vacuum on atomically flat R-plane sapphire wafers. A…

cond-mat.mtrl-sci2011★ 3 cited

Epitaxial refractory-metal buer layers with a chemical gradient for adjustable lattice parameter and controlled chemical interface

Olivier Fruchart, Anthony Rousseau, Didier Schmaus +3

We have developed and characterized the structure and composition of nanometers-thick solid-solution epitaxial layers of (V,Nb) on sapphire (1120), displaying a continuous lateral…

cond-mat.mtrl-sci2011★ 6 cited

Martensite structures and twinning in substrate-constrained epitaxial Ni-Mn-Ga films deposited by a magnetron co-sputtering process

Jérémy Tillier, Daniel Bourgault, Sébastien Pairis +3

In order to obtain Ni-Mn-Ga epitaxial films crystallized in martensite structures showing Magnetic-Induced Rearrangement (MIR) of martensite variants, a fine control of the composi…

cond-mat.mtrl-sci2011

Ni-Mn-Ga films in the austenite and the martensite structures at room temperature: Uniaxial texturation and epitaxial growth

Jérémy Tillier, Antinéa Einig, Daniel Bourgault +7

Ni-Mn-Ga films in the austenite and the martensite structures at room temperature have been obtained using the DC magnetron sputtering technique. Two elaboration processes were stu…

cond-mat.mtrl-sci2010★ 16 cited

Tuning macro-twinned domain sizes and the b-variants content of the adaptive 14-modulated martensite in epitaxial Ni-Mn-Ga films by co-sputtering

Jérémy Tillier, Daniel Bourgault, Philippe Odier +5

In order to obtain modulated-martensite in our epitaxial Ni-Mn-Ga films, we have tuned the composition by using a co-sputtering process. Here we present how the composition affects…

cond-mat.supr-con2009★ 39 cited

Low temperature transition to a superconducting phase in boron-doped silicon films grown on (001)-oriented silicon wafers

C. Marcenat, J. Kacmarcik, R. Piquerel +11

We report on a detailed analysis of the superconducting properties of boron-doped silicon films grown along the 001 direction by Gas Immersion Laser Doping. The doping concentratio…