3 papers
cond-mat.mtrl-sci2026
Band Tail State Broadening in IGZO TFTs After pBTI-Induced Negative VT Shift Revealed via DC and 1/f Noise Measurements
R. Asanovski, P. Rinaudo, A. Chasin +9
We investigate the origin of negative threshold voltage shifts in back-gated amorphous IGZO TFTs under positive bias and high temperature stress. Combined DC and 1/f noise measurem…
cond-mat.mtrl-sci2026
Revealing the Partially Coherent Nature of Transport in IGZO
Ying Zhao, Michiel J. van Setten, Anastasiia Kruv +10
Thin-film transistors based on amorphous oxide semiconductors (AOS) are promising candidates for enabling further DRAM scaling and 3D integration, which are critical for advanced c…
physics.app-ph2025
The impact of process steps on nearly ideal subthreshold slope in 300-mm compatible InGaZnO TFT
Hongwei Tang, Dennis Lin, Subhali Subhechha +14
While we demonstrate a back-gated (BG) amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) transistors with a nearly ideal subthreshold slope (SS) ~ 60 mV/dec. However, SS degrades when a…