193 citations · 715 across the 18 of their papers we have counts for
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Monolithically integrated 940 nm half VCSELs on bulk Ge substrates
Yunlong Zhao, Jia Guo, Markus Feifel +7
High quality n-type AlGaAs distributed Bragg reflectors (DBRs) and lnGaAs multiple quantum wells were successfully monolithically grown on 4-inch off-cut Ge (100) wafers. The grown…
Study of monolithically integrated 940 nm AlGaAs distributed Bragg reflectors on graded GaAsP/bulk Si substrates
Jia Guo, Yunlong Zhao, Markus Feifel +7
We report the fabrication of monolithically integrated 940 nm AlGaAs distributed Bragg reflectors (DBRs) on graded GaAsP/Si substrates. Low-density surface bumps and cross-hatch pa…
Monolithic integration of 940 nm AlGaAs distributed Bragg reflectors on bulk Ge substrates
Yunlong Zhao, Jia Guo, Markus Feifel +8
High quality 940 nm AlGaAs n-type distributed Bragg reflectors (DBRs) were successfully monolithically grown on off-cut Ge (100) substrates. The Ge-DBRs have reflectivi…
Monolithic Integration of AlGaAs Distributed Bragg Reflectors on Virtual Ge Substrates via Aspect Ratio Trapping
Yiheng Lin, Wei Shi, Jizhong Li +8
High quality AlxGa1-xAs distributed Bragg reflectors (DBRs) were successfully monolithically grown on on-axis Si (100) substrates via a Ge layer formed by aspect ratio trapping (AR…