activity
20092026
most citedOut-of-plane Piezoelectricity and Ferroelectricity in Layered -In2Se3 Nano-flakes

929 citations · 4.4k across the 32 of their papers we have counts for

collaborators
Showing 2018Show all

6 papers · 1 filter

physics.app-ph2018★ 126 cited

Truly concomitant and independently expressed short- and long-term plasticity in Bi2O2Se-based three-terminal memristor

Ziyang Zhang, Tianran Li, Yujie Wu +10

Orchestration of diverse synaptic plasticity mechanisms across different timescales produces complex cognitive processes. To achieve comparable cognitive complexity in memristive n…

cond-mat.mes-hall2018★ 8 cited

Transport signatures of relativistic quantum scars in a graphene cavity

G. Q. Zhang, Xianzhang Chen, Li Lin +5

We study a relativistic quantum cavity system realized by etching out from a graphene sheet by quantum transport measurements and theoretical calculations. The conductance of the g…

cond-mat.mes-hall2018★ 120 cited

Raman Spectra and Strain Effects in Bismuth Oxychalcogenides

Ting Cheng, Congwei Tan, Shuqing Zhang +3

A new type of two-dimensional layered semiconductor with weak electrostatic but not van der Waals interlayer interactions, Bi2O2Se, has been recently synthesized, which shown excel…

cond-mat.mes-hall2018★ 109 cited

Self-Modulation Doping Effect in the High-Mobility Layered Semiconductor Bi2O2Se

Huixia Fu, Jinxiong Wu, Hailin Peng +1

Recently an air-stable layered semiconductor Bi2O2Se was discovered to exhibit an ultrahigh mobility in transistors fabricated with its thin layers. In this work, we explored the m…

cond-mat.mes-hall2018★ 1 cited

Low-field magnetotransport in graphene cavity devices

G. Q. Zhang, N. Kang, J. Y. Li +4

Confinement and edge structures are known to play significant roles in electronic and transport properties of two-dimensional materials. Here, we report on low-temperature magnetot…

cond-mat.mes-hall2018★ 5 cited

Charge transport and electron-hole asymmetry in low-mobility graphene/hexagonal boron nitride heterostructures

Jiayu Li, Li Lin, Guang-Yao Huang +5

Graphene/hexagonal boron nitride (G/-BN) heterostructures offer an excellent platform for developing nanoelectronic devices and for exploring correlated states in graphene under…