49 citations · 89 across the 4 of their papers we have counts for
4 papers
Engineering Nanowire n-MOSFETs at Lg < 8 nm
Saumitra Mehrotra, SungGeun Kim, Tillmann Kubis +3
As metal-oxide-semiconductor field-effect transistors (MOSFET) channel lengths (Lg) are scaled to lengths shorter than Lg<8 nm source-drain tunneling starts to become a major perfo…
Atomistic approach to alloy scattering in
Saumitra R Mehrotra, Abhijeet Paul, Gerhard Klimeck
SiGe alloy scattering is of significant importance with the introduction of strained layers and SiGe channels into CMOS technology. However, alloy scattering has till now been trea…
Interface trap density metrology from sub-threshold transport in highly scaled undoped Si n-FinFETs
Abhijeet Paul, Giuseppe C. Tettamanzi, Sunhee Lee +5
Channel conductance measurements can be used as a tool to study thermally activated electron transport in the sub-threshold region of state-of-art FinFETs. Together with theoretica…
Interface Trap Density Metrology of state-of-the-art undoped Si n-FinFETs
Giuseppe Carlo Tettamanzi, Abhijeet Paul, Sunhee Lee +5
The presence of interface states at the MOS interface is a well-known cause of device degradation. This is particularly true for ultra-scaled FinFET geometries where the presence o…