188 citations · 579 across the 11 of their papers we have counts for
4 papers · 1 filter
The effect of spin drift on spin accumulation voltages in highly-doped Si
Makoto Kameno, Eiji Shikoh, Teruya Shinjo +5
An investigation was carried out into the effect of spin drift on spin accumulation signals in highly-doped Si using non-local 4-terminal (NL-4T) and 3-terminal (NL-3T) methods. Th…
Observation of weak temperature dependence of spin diffusion length in highly-doped Si by using a non-local 3-terminal method
M. Kameno, E. Shikoh, T. Oikawa +4
We conduct an experimental investigation of temperature dependence of spin diffusion length in highly-doped n-type silicon by using a non-local 3-terminal method. Whereas an effect…
Experimental Investigation of Spin Transport Properties in Silicon by Using a Non-local Geometry
Masashi Shiraishi, Yoshiya Honda, Eiji Shikoh +6
A systematic investigation of spin transport properties in silicon at 8 K by using a non-local geometry is presented. The spin injection signal in the non-local scheme is found to…
Room-Temperature Electron Spin Transport in a Highly Doped Si Channel
Toshio Suzuki, Tomoyuki Sasaki, Tohru Oikawa +2
We report on the first demonstration of generating a spin current and spin transport in a highly doped Si channel at room temperature (RT) using a four-terminal lateral device with…