20 citations · 86 across the 14 of their papers we have counts for
5 papers · 1 filter
Structural and optical changes induced by incorporation of antimony into InAs/GaAs(001) quantum dots
A. G. Taboada, A. M. Sánchez, A. M. Beltrán +12
We present experimental evidence of Sb incorporation inside InAs/GaA(001) quantum dots exposed to an antimony flux immediately before capping with GaAs. The Sb composition profile…
Strain-balanced type-II superlattices for efficient multi-junction solar cells
A. Gonzalo, A. D. Utrilla, D. F. Reyes +9
We propose type-II GaAsSb/GaAsN superlattices (SLs) lattice-matched to GaAs as a novel material for the 1 eV sub-cells present in highly efficient GaAs/Ge-based multi-junction sola…
Strain driven migration of In during the growth of InAs/GaAs quantum posts
D. Alonso-Álvarez, B. Alén, J. M. Ripalda +6
Using the mechano-optical stress sensor technique, we observe a counter-intuitive reduction of the compressive stress when InAs is deposited on GaAs (001) during growth of quantum…
Strain balanced quantum posts
D. Alonso-Álvarez, B. Alén, J. M. Ripalda +8
Quantum posts are assembled by epitaxial growth of closely spaced quantum dot layers, modulating the composition of a semiconductor alloy, typically InGaAs. In contrast with most s…
In-situ accumulated stress measurements: application to strain balanced quantum dots and quantum posts
D. Alonso-Álvarez., B. Alén, J. M. Ripalda +6
In this work we use the in-situ accumulated stress monitoring technique to evaluate the evolution of the stress during the strain balancing of InAs/GaAs quantum dots and quantum po…