154 citations · 429 across the 4 of their papers we have counts for
4 papers
Universal electric-field-driven resistive transition in narrow-gap Mott insulators
Pablo Stoliar, Laurent Cario, Etienne Janod +6
One of today's most exciting research frontier and challenge in condensed matter physics is known as Mottronics, whose goal is to incorporate strong correlation effects into the re…
Electric-Field-Induced Resistive Switching in a Family of Mott Insulators : towards Non-Volatile Mott-RRAM Memories
Laurent Cario, Cristian Vaju, Benoit Corraze +2
The fundamental building blocks of modern silicon-based microelectronics, such as double gate transistors in non-volatile Flash memories, are based on the control of electrical res…
Resistive switching induced by electronic avalanche breakdown in GaTaSeTe narrow gap Mott Insulators
Vincent Guiot, Laurent Cario, Etienne Janod +6
Mott transitions induced by strong electric fields are receiving a growing interest. Recent theoretical proposals have focused on the Zener dielectric breakdown in Mott insulators,…
Behavior of hydrogen ions, atoms, and molecules in alpha-boron studied using density functional calculations
Philipp Wagner, Christopher P. Ewels, Irene Suarez-Martinez +4
We examine the behaviour of hydrogen ions, atoms and molecules in alpha-boron using density functional calculations. Hydrogen behaves as a negative-U centre, with positive H ions p…