activity
20092024
most citedProbing ultrafast symmetry breaking in photo-stimulated matter

31 citations · 208 across the 16 of their papers we have counts for

collaborators

16 papers

cond-mat.mtrl-sci2024

Suppression of shear ionic motions in bismuth by coupling with large-amplitude internal displacement

Kunie Ishioka, Oleg V. Misochko

Bismuth, with its rhombohedral crystalline structure and two Raman active phonon modes corresponding to the internal displacement () and shear () ionic motions, offe…

quant-ph2021

New evidence for a nonclassical behavior of laser multimode light

M. Lebedev, A. Demenev, A. Parakhonsky +1

In this work, we present new experimental evidence of a nonclassical behavior of a multimode Fabry-Perot (FP) semiconductor laser by the measurements of intensity correlation funct…

cond-mat.mtrl-sci2021★ 26 cited

Photo-Induced Ultrafast Symmetry Switch in SnSe

Yadong Han, Junhong Yu, Hang Zhang +8

Layered tin selenide (SnSe) has recently emerged as a high-performance thermoelectric material with the current record for the figure of merit (ZT) observed in the high-temperature…

quant-ph2018★ 7 cited

Phase estimation algorithm for the multibeam optical metrology

V. V. Zemlyanov, N. S. Kirsanov, M. R. Perelshtein +5

Unitary Fourier transform lies at the core of the multitudinous computational and metrological algorithms. Here we show experimentally how the unitary Fourier transform-based phase…

quant-ph2018★ 5 cited

Multimode semiconductor laser: quantum versus classical behavior

M. Lebedev, A. Demenev, A. Parakhonsky +1

Temporal correlations of radiation intensities of a multimode Fabry-Perot semiconductor laser are investigated. Strong intensity correlations with a fixed phase shift between diffe…

cond-mat.mtrl-sci2018★ 5 cited

Temperature effect on the coupling between coherent longitudinal phonons and plasmons in n- and p-type GaAs

Jianbo Hu, Hang Zhang, Yi Sun +2

The coupling between longitudinal optical (LO) phonons and plasmons plays a fundamental role in determining the performance of doped semiconductor devices. In this work, we report…