Michael D. Williams

most citedMolecular Beam Epitaxy of KTaO

_{3}

26 citations · 26 across the 2 of their papers we have counts for

collaborators

2 papers

cond-mat.mtrl-sci2022★ 26 cited

Molecular Beam Epitaxy of KTaO $_{3}$

Tobias Schwaigert, Salva Salmani-Razaie, Matthew R. Barone +6

Strain-engineering is a powerful means to tune the polar, structural, and electronic instabilities of incipient ferroelectrics. KTaO3 is near a polar instability and shows anisotro…

cond-mat.mtrl-sci2022

Silicon-doped $β$ -Ga $_{2}$ O $_{3}$ films grown at 1 $μ$ m/h by suboxide molecular-beam epitaxy

Kathy Azizie, Felix V. E. Hensling, Cameron A. Gorsak +21

We report the use of suboxide molecular-beam epitaxy (S-MBE) to grow $β$ -Ga $_{2}$ O $_{3}$ at a growth rate of ~1 $μ$ m/h with control of the silicon doping concentration from 5x10 $^{16}$ …

Molecular Beam Epitaxy of KTaO3​

Silicon-doped β-Ga2​O3​ films grown at 1 μm/h by suboxide molecular-beam epitaxy

Molecular Beam Epitaxy of KTaO $_{3}$

Silicon-doped $β$ -Ga $_{2}$ O $_{3}$ films grown at 1 $μ$ m/h by suboxide molecular-beam epitaxy