Guoliang Yu

activity

20212023

most citedGeneral Theory for Bilayer Stacking Ferroelectricity

190 citations · 238 across the 3 of their papers we have counts for

collaborators

3 papers

cond-mat.mtrl-sci2023★ 18 cited

Ferroelectrically switchable magnetic multistates in MnBi $_{2}$ Te $_{4}$ (Bi $_{2}$ Te $_{3}$ ) $_{n}$ and MnSb $_{2}$ Te $_{4}$ (Sb $_{2}$ Te $_{3}$ ) $_{n}$ (n = 0, 1) thin films

Guoliang Yu, Chuhan Tang, Zhiqiang Tian +4

Ferroelectric control of two-dimensional magnetism is promising in fabricating electronic devices with high speed and low energy consumption. The newly discovered layered MnBi $_{2}$ T…

cond-mat.mtrl-sci2022★ 190 cited

General Theory for Bilayer Stacking Ferroelectricity

Junyi Ji, Changsong Xu, H. J. Xiang

Two-dimensional (2D) ferroelectrics, which is rare in nature, enable high-density non-volatile memory with low energy consumption. Here, we propose a theory of bilayer stacking fer…

cond-mat.mtrl-sci2021★ 30 cited

Interface engineering of ferroelectricity in thin films of thiophosphate ABP 2 X 6 (A = Cu, Ag; B = In, Bi, Cr, V; and X = S, Se)

Guoliang Yu, Anlian Pan, Mingxing Chen

Two-dimensional ferroelectrics (FEs) are promising in the miniaturization of memory devices with ultra-high-density data storage and low power consumption. However, many thiophosph…

Ferroelectrically switchable magnetic multistates in MnBi2​Te4​(Bi2​Te3​)n​ and MnSb2​Te4​(Sb2​Te3​)n​ (n = 0, 1) thin films

General Theory for Bilayer Stacking Ferroelectricity

Interface engineering of ferroelectricity in thin films of thiophosphate ABP 2 X 6 (A = Cu, Ag; B = In, Bi, Cr, V; and X = S, Se)

Ferroelectrically switchable magnetic multistates in MnBi $_{2}$ Te $_{4}$ (Bi $_{2}$ Te $_{3}$ ) $_{n}$ and MnSb $_{2}$ Te $_{4}$ (Sb $_{2}$ Te $_{3}$ ) $_{n}$ (n = 0, 1) thin films