activity
19992019
most citedTuning of thermoelectric properties with changing Se content in Sb2Te3

27 citations · 52 across the 7 of their papers we have counts for

collaborators

7 papers

cond-mat.supr-con2019★ 6 cited

Nematic properties of FeSeTe crystals with a low Te content

Y. A. Ovchenkov, D. A. Chareev, V. A. Kulbachinskii +7

We report on the synthesis and physical properties of FeSeTe single crystals with a low Te content (x = 0.17, 0.21, 0.25), where the replacement of Se with Te partially…

cond-mat.supr-con2018★ 4 cited

Majority carrier type inversion in FeSe family and "doped semimetal" scheme in iron-based superconductors

Y. A. Ovchenkov, D. A. Chareev, V. A. Kulbachinskii +5

The field and temperature dependencies of the longitudinal and Hall resistivity have been studied for high-quality FeSeS (x up to 0.14) single crystals. Quasiclas…

cond-mat.supr-con2017★ 6 cited

Magnetotransport properties of FeSe in fields up to 50T

Y. A. Ovchenkov, D. A. Chareev, V. A. Kulbachinskii +5

Magnetotransport properties of the high-quality FeSe crystal, measured in a wide temperature range and in magnetic fields up to 50 T, show the symmetry of the main holelike and ele…

cond-mat.mtrl-sci2016★ 27 cited

Tuning of thermoelectric properties with changing Se content in Sb2Te3

Diptasikha Das, K. Malik, A. K. Deb +7

Polycrystalline Sb 2 Te 3-x Se x (0.0 < x < 1.0) samples were synthesized by the solid state reaction method. The structural analysis showed that up to the maximal concentration of…

cond-mat.mtrl-sci2011★ 1 cited

Effect of hydrogen plasma treatment and oxygen deficiency on conducting properties of InO:Sn thin films

V. G. Kytin, V. A. Kulbachinskii, O. V. Reukova +4

Electrical conductivity, Hall effect and magnetoresistance of InO:Sn thin films deposited on a glass substrates at different temperatures and oxygen pressures, as well as t…

cond-mat.mtrl-sci1999★ 3 cited

Wavelength dependent negative and positive persistent photoconductivity in Sn delta-doped GaAs structures

V. A. Kulbachinskii, V. G. Kytin, A. V. Golikov +5

The photoconductivity of GaAs structures delta-doped by Sn has been investigated for wavelengths lambda= 650-1200 nm in the temperature interval T= 4.2-300 K. The electron densitie…