77 citations · 203 across the 6 of their papers we have counts for
5 papers
Dipolar interlayer excitons in transition metal dichalcogenide alloy heterobilayers
E. Katsipoulaki, N. G. Chatzarakis, E. Rigoutsou +6
Interlayer excitons in transition metal dichalcogenide (TMD) heterobilayers possess a permanent electric dipole moment and long recombination lifetimes, making them a promising pla…
Room temperature observation of biexcitons in exfoliated WS2 monolayers
I. Paradisanos, S. Germanis, N. T. Pelekanos +4
Single layers of WS2 are direct gap semiconductors with high photoluminescence (PL) yield holding great promise for emerging applications in optoelectronics. The spatial confinemen…
Extraction of absorption coefficients from GaN nanowires grown on opaque substrates
Rahul Jayaprakash, Debo Ajagunna, Savvas Germanis +4
We demonstrate a new method to measure absorption coefficients in any family of nanowires, provided they are grown on a substrate having considerable difference in permittivity wit…
Residual strain and piezoelectric effects in passivated GaAs/AlGaAs core-shell nanowires
Moïra Hocevar, Le Thuy Thanh Giang, Rudeesun Songmuang +5
We observe a systematic red shift of the band-edge of passivated GaAs/Al0.35Ga0.65As core-shell nanowires with increasing shell thickness up to 100 nm. The shift is detected both i…
InAs/GaAs (211)B quantum dots with negligible FSS for the generation of entangled photons
S. Germanis, A. Beveratos, G. E. Dialynas +4
Polarization-resolved single dot spectroscopy performed on (211)B InAs/GaAs quantum dots reveals that the fine structure splitting of the excitonic levels in these dots is much low…