most citedMultilayer epitaxial graphene formed by pyrolysis of polycrystalline silicon-carbide grown on c-plane sapphire substrates

17 citations · 17 across the 1 of their papers we have counts for

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1 paper

cond-mat.mtrl-sci2011★ 17 cited

Multilayer epitaxial graphene formed by pyrolysis of polycrystalline silicon-carbide grown on c-plane sapphire substrates

Timothy J. McArdle, Jack O. Chu, Yu Zhu +6

We use ultra-high vacuum chemical vapor deposition to grow polycrystalline silicon carbide (SiC) on c-plane sapphire wafers which are then annealed between 1250 and 1450°C in vacuu…