1 citations · 1 across the 2 of their papers we have counts for
2 papers
cond-mat.mtrl-sci2014
The features of contact resistivity behavior at helium temperatures for InP- and GaAs-based ohmic contacts
A. V. Sachenko, A. E. Belyaev, N. S. Boltovets +4
Contact resistivity rc of InP and GaAs based ohmic contacts was measured in the 4.2/300 K temperature range. Nonmonotonic dependences rc(T), with a minimum at temperature 50 K (150…
cond-mat.mtrl-sci2011★ 1 cited
Temperature dependence of contact resistance of Au-Ti-Pd2Si-n+-Si ohmic contacts
A. E. Belyaev, N. S. Boltovets, R. V. Konakova +3
We investigated temperature dependence of contact resistance of an Au-Ti-Pd2Si ohmic contact to heavily doped n+-Si. The contact resistance increases with temperature owing to cond…