activity
20102013
most citedSurface energy engineering of graphene

460 citations · 711 across the 10 of their papers we have counts for

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Showing cond-mat.mtrl-sciShow all

6 papers · 1 filter

cond-mat.mtrl-sci201327 cited

Characterization of magnetostatic surface spin waves in magnetic thin films: evaluation for microelectronic applications

Jae Hyun Kwon, Sankha Subhra Mukherjee, Praveen Deorani +2

The authors have investigated the possibility of utilizing spin waves for inter- and intra-chip communications, and as logic elements using both simulations and experimental techni…

cond-mat.mtrl-sci2012

Disorder-free sputtering method on graphene

Xue Peng Qiu, Young Jun Shin, Jing Niu +5

Deposition of various materials onto graphene without causing any disorder is highly desirable for graphene applications. Especially, sputtering is a versatile technique to deposit…

cond-mat.mtrl-sci2012

Frictional characteristics of exfoliated and epitaxial graphene

Young Jun Shin, Ryan Stromberg, Rick Nay +4

To determine the friction coefficient of graphene, micro-scale scratch tests are conducted on exfoliated and epitaxial graphene at ambient conditions. The experimental results show…

cond-mat.mtrl-sci201148 cited

Spin wave assisted current induced magnetic domain wall motion

Mahdi Jamali, Hyunsoo Yang, Kyung-Jin Lee

The interaction between the propagating spin waves and the current driven motion of a transverse domain wall in magnetic nanowires is studied by micromagnetic simulations. If the s…

cond-mat.mtrl-sci201116 cited

Effect of nonadiabatic spin transfer torque on domain wall resonance frequency and mass

Mahdi Jamali, Kyung-Jin Lee, Hyunsoo Yang

The dynamics of a magnetic domain wall in a semi circular nanowire loop is studied by an analytical model and micromagnetic simulations. We find a damped sinusoidal oscillation of…

cond-mat.mtrl-sci2011460 cited

Surface energy engineering of graphene

Young Jun Shin, Yingying Wang, Han Huang +5

Contact angle goniometry is conducted for epitaxial graphene on SiC. Although only a single layer of epitaxial graphene exists on SiC, the contact angle drastically changes from 69…