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Properties of Individual Dopant Atoms in Single-Layer MoS2: Atomic Structure, Migration, and Enhanced Reactivity
Yung-Chang Lin, Dumitru O. Dumcenco, Hannu-Pekka Komsa +4
The differences in the behavior of Re (n-type) and Au (p-type) dopant atoms in single-layered MoS2 were investigated by in situ scanning transmission electron microscopy. Re atoms…
Electronic structures and optical properties of realistic transition metal dichalcogenide heterostructures from first principles
Hannu-Pekka Komsa, Arkady V. Krasheninnikov
We calculate from first principles the electronic structure and optical properties of a number of transition metal dichalcogenide (TMD) bilayer heterostructures consisting of MoS2…
Strains Induced by Point Defects in Graphene on a Metal
Nils Blanc, Fabien Jean, Arkady V. Krasheninnikov +2
Strains strongly affect the properties of low-dimensional materials, such as graphene. By combining in situ, in operando, reflection high energy electron diffraction experiments wi…
Dual origin of defect magnetism in graphene and its reversible switching by molecular doping
R. R. Nair, I-Ling Tsai, M. Sepioni +7
A possibility to control magnetic properties by using electric fields is one of the most desirable characteristics for spintronics applications. Finding a suitable material remains…