35 citations · 47 across the 2 of their papers we have counts for
2 papers
cond-mat.mtrl-sci2012★ 12 cited
Anisotropic Vapor HF etching of silicon dioxide for Si microstructure release
Vikram Passi, Ulf Sodervall, Bengt Nilsson +6
Damages are created in a sacrificial layer of silicon dioxide by ion implantation to enhance the etch rate of silicon-dioxide in liquid and vapor phase hydrofluoric acid. The etch…
cond-mat.mes-hall2011★ 35 cited
Black Silicon with high density and high aspect ratio nanowhiskers
S Kalem, P Werner, Ö Arthursson +5
Physical properties of black Silicon (b-Si) formed on Si wafers by reactive ion etching in chlorine plasma are reported in an attempt to clarify the formation mechanism and the ori…