151 citations · 585 across the 20 of their papers we have counts for
10 papers · 1 filter
Peak splitting and bias fields in ferroelectric hafnia mediated by interface charge effects
Moritz Engl, Wassim Hamouda, Ines Häusler +5
The pristine state of hafnium based ferroelectric devices exhibits various unwanted properties, such as imprint and peak splitting, which diminish with bipolar cycling. The incorpo…
Weight update in ferroelectric memristors with identical and non-identical pulses
Suzanne Lancaster, Maximilien Remillieux, Moritz Engl +5
Ferroelectric tunnel junctions (FTJs) are a class of memristor which promise low-power, scalable, field-driven analog operation. In order to harness their full potential, operation…
Optimizing nucleation layers for the integration of ferroelectric HZO on CVD-grown graphene
Suzanne Lancaster, Iciar Arnay, Ruben Guerrero +4
Direct integration of ferroelectric Hf0.5Zr0.5O2 (HZO) on the inert surface of graphene is challenging. Here, using nucleation layers to promote atomic layer deposition of HZO was…
Investigating charge trapping in ferroelectric thin films through transient measurements
Suzanne Lancaster, Patrick D Lomenzo, Moritz Engl +4
A measurement technique is presented to quantify the polarization loss in ferroelectric thin films as a function of delay time during the first 100s after switching. This technique…
Towards Non-Volatile Spin Orbit Devices: Deposition of Ferroelectric Hafnia on Monolayer Graphene/Co/HM Stacks
Suzanne Lancaster, Iciar Arnay, Ruben Guerrero +10
Although technologically challenging, the integration of ferroelectric thin films with graphene spintronics potentially allows the realization of highly efficient, electrically tun…
Antiferroelectric negative capacitance from a structural phase transition in zirconia
Michael Hoffmann, Zheng Wang, Nujhat Tasneem +20
Crystalline materials with broken inversion symmetry can exhibit a spontaneous electric polarization, which originates from a microscopic electric dipole moment. Long-range polar o…