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20112026
most citedSimulation benchmarks for low-pressure plasmas: capacitive discharges

293 citations · 1.4k across the 68 of their papers we have counts for

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12 papers · 1 filter

cond-mat.mtrl-sci2026

From Processing to Functionality: Engineering Accessible Material States in Cu-Embedded SiO Memristive Devices

Tobias Gergs, Rouven Lamprecht, Sahitya Yarragolla +5

Resistive switching in oxide-based devices is widely governed by stochastic defect processes, yet a predictive link between fabrication conditions and functional behavior remains e…

cond-mat.mtrl-sci2026

On the physical origins of switching diversity in Cu-embedded SiO memristive devices

Sahitya Yarragolla, Rouven Lamprecht, Tobias Gergs +4

Resistive switching devices with sub-stoichiometric SiO and pancake-like Cu nanoparticles (Cu-PCs) exhibit distinct macroscopic current-voltage characteristics classified as ca…

cond-mat.mtrl-sci2024

Physics-based Modeling and Simulation of Nanoparticle Networks

Torben Hemke, Robin Struck, Sahitya Yarragolla +3

This study presents the computational modeling and simulation of silver nanoparticle networks (NPNs), which, in the realm of neuromorphic computation, suggest to be a promising can…

cond-mat.mtrl-sci2023★ 6 cited

Physics-separating artificial neural networks for predicting sputtering and thin film deposition of AlN in Ar/N discharges on experimental timescales

Tobias Gergs, Thomas Mussenbrock, Jan Trieschmann

Understanding and modeling plasma-surface interactions frame a multi-scale as well as multi-physics problem. Scale-bridging machine learning surface surrogate models have been demo…

cond-mat.mtrl-sci2022★ 14 cited

Physics-separating artificial neural networks for predicting initial stages of Al sputtering and thin film deposition in Ar plasma discharges

Tobias Gergs, Thomas Mussenbrock, Jan Trieschmann

Simulations of Al thin film sputter depositions rely on accurate plasma and surface interaction models. Establishing the latter commonly requires a higher level of abstraction and…

cond-mat.mtrl-sci2021★ 8 cited

Molecular Dynamics Study on the Role of Ar Ions in the Sputter Deposition of Al Thin Films

Tobias Gergs, Thomas Mussenbrock, Jan Trieschmann

Molecular dynamics simulations are often used to study sputtering and thin film growth. Compressive stresses in these thin films are generally assumed to be caused by a combination…