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cond-mat.mes-hall2024★ 3 cited
Coexistence of resistive capacitive and virtual inductive effects in memristive devices
Sahitya Yarragolla, Torben Hemke, Jan Trieschmann +1
This paper examines the coexistence of resistive, capacitive, and inertia (virtual inductive) effects in memristive devices, focusing on ReRAM devices, specifically the interface-t…
cond-mat.mes-hall2024★ 9 cited
Non-zero crossing current-voltage characteristics of interface-type resistive switching devices
Sahitya Yarragolla, Torben Hemke, Jan Trieschmann +1
A number of memristive devices, mainly ReRAMs, have been reported to exhibit a unique non-zero crossing hysteresis attributed to the interplay of resistive and not yet fully unders…