93 citations · 193 across the 36 of their papers we have counts for
Showing eess.SYShow all
2 papers · 1 filter
eess.SY2021★ 1 cited
Channel Models and Coding Solutions for 1S1R Crossbar Resistive Memory with High Line Resistance
Zehui Chen, Lara Dolecek
Crossbar resistive memory with the 1 Selector 1 Resistor (1S1R) structure is attractive for nonvolatile, high-density, and low-latency storage-class memory applications. As technol…
eess.SY2019
Write and Read Channel Models for 1S1R Crossbar Resistive Memory with High Line Resistance
Zehui Chen, Lara Dolecek
Crossbar resistive memory with 1 Selector 1 Resistor (1S1R) structure is attractive for low-cost and high-density nonvolatile memory applications. As technology scales down to the…