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Imaging and registration of buried atomic-precision donor devices using scanning capacitance microscopy
E. Bussmann, M. Rudolph, G. S. Subramania +7
We show that a scanning capacitance microscope (SCM) can image buried delta-doped donor nanostructures fabricated in Si via a recently developed atomic-precision scanning tunneling…
Probing limits of STM field emission patterned Si:P -doped devices
M. Rudolph, S. M. Carr, G. Subramania +6
Recently, a single atom transistor was deterministically fabricated using phosphorus in Si by H-desorption lithography with a scanning tunneling microscope (STM). This milestone in…
High-efficiency light-wave control with all-dielectric optical Huygens' metasurfaces
Manuel Decker, Isabelle Staude, Matthias Falkner +5
Optical metasurfaces have developed as a breakthrough concept for advanced wave-front engineering enabled by subwavelength resonant nanostructures. However, reflection and/or absor…
Spontaneous emission in a silicon charge qubit
Khoi T. Nguyen, N. Tobias Jacobson, Michael P. Lilly +6
The interaction between a qubit and its environment provides a channel for energy relaxation which has an energy-dependent timescale governed by the specific coupling mechanism. We…