120 citations · 196 across the 7 of their papers we have counts for
7 papers
Experimental evidence of disordered crystalline premixing in sputter-deposited Ni(V)/Al multilayers
Michael J Abere, Paul G. Kotula, Jonathan S. Paras +1
The sputter deposition of alternating layers of Ni(V) and Al forms a reactive multilayer known to undergo self-propagating formation reactions when ignited. The sequential depositi…
Chemical segregation in Ge2Sb2Te5 thin films during in-situ heating
Shalini Tripathi, Paul Kotula, Manish Singh +4
Germanium antimony telluride has been the most used and studied phase-change material for electronic memory due to its suitable crystallization temperature, amorphous to crystallin…
Spin transport in an insulating ferrimagnetic-antiferromagnetic-ferrimagnetic trilayer as a function of temperature
Yizhang Chen, Egecan Cogulu, Debangsu Roy +6
We present a study of the transport properties of thermally generated spin currents in an insulating ferrimagnetic-antiferromagnetic-ferrimagnetic trilayer over a wide range of tem…
Spin-triplet supercurrent in Josephson junctions containing a synthetic antiferromagnet with perpendicular magnetic anisotropy
Joseph A. Glick, Samuel Edwards, Demet Korucu +7
We present measurements of Josephson junctions containing three magnetic layers with noncolinear magnetizations. The junctions are of the form $S/F^{\prime}/N/F/N/F^{\prime \prime}…
Conducting interface in oxide homojunction: understanding of superior properties in black TiO2
Xujie Lu, Aiping Chen, Yongkang Luo +12
Black TiO2 nanoparticles with a crystalline-core and amorphous-shell structure exhibit superior optoelectronic properties in comparison with pristine TiO2. The fundamental mechanis…
Critical Current Oscillations of Elliptical Josephson Junctions with Single-Domain Ferromagnetic Layers
Joseph A. Glick, Mazin A. Khasawneh, Bethany M. Niedzielski +6
Josephson junctions containing ferromagnetic layers are of considerable interest for the development of practical cryogenic memory and superconducting qubits. Such junctions exhibi…
Enhancement-mode buried strained silicon channel quantum dot with tunable lateral geometry
T. M. Lu, N. C. Bishop, T. Pluym +7
We propose and demonstrate a relaxed-SiGe/strained-Si (SiGe/s-Si) enhancement-mode gate stack for quantum dots. The enhancement-mode SiGe/s-Si structure is pursued because it space…